4.6 Article

Room-temperature magnetoresistance in organic spin-valves based on a Co2MnSi Heusler alloy

Journal

ORGANIC ELECTRONICS
Volume 14, Issue 12, Pages 3186-3189

Publisher

ELSEVIER
DOI: 10.1016/j.orgel.2013.09.002

Keywords

Organic spin valve; Heusler alloy; Magnetoresistance

Funding

  1. Ministry of Education, Culture, Sports, Science, and Technology of Japan [23350091]
  2. Global COE Program
  3. Grants-in-Aid for Scientific Research [23350091] Funding Source: KAKEN

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We report room-temperature magnetoresistance in sandwich structures consisting of Co2MnSi/organic spacer/Co. We have prepared the epitaxial films of a Heusler alloy Co2MnSi on MgO (001) by pulsed laser deposition, followed by thermal depositions of organic and Co layers. The spin-valve with an organic layer of N, N-bis (3-methylphenyl)-N, N-diphenylbenzidine exhibited a positive magnetoresistance ratio of up to 7.8%, which was the highest value among organic spin-valves at room temperature. (C) 2013 Elsevier B.V. All rights reserved.

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