Journal
ORGANIC ELECTRONICS
Volume 13, Issue 6, Pages 939-944Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2012.02.008
Keywords
Charge generation; Recombination; p-n Junction; Low voltage
Funding
- Korea Science and Engineering Foundation (KOSEF)
- Korea government (MEST)
- National Research Foundation of Korea [핵06A3701] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 x 10(-1) cm(2)/Vs in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m(2) was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
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