Highly reliable Si3N4–HfO2 stacked heterostructure to fully flexible poly-(3-hexylthiophene) thin-film transistor

Published 2011 View Full Article

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Title
Highly reliable Si3N4–HfO2 stacked heterostructure to fully flexible poly-(3-hexylthiophene) thin-film transistor
Authors
Keywords
-
Journal
ORGANIC ELECTRONICS
Volume 12, Issue 8, Pages 1414-1421
Publisher
Elsevier BV
Online
2011-05-27
DOI
10.1016/j.orgel.2011.05.011

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