Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes

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Title
Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes
Authors
Keywords
-
Journal
ORGANIC ELECTRONICS
Volume 10, Issue 2, Pages 266-274
Publisher
Elsevier BV
Online
2008-12-14
DOI
10.1016/j.orgel.2008.11.018

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