Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method

Published 2009 View Full Article

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Title
Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method
Authors
Keywords
-
Journal
ORGANIC ELECTRONICS
Volume 10, Issue 5, Pages 895-900
Publisher
Elsevier BV
Online
2009-05-06
DOI
10.1016/j.orgel.2009.04.017

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