High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

C-60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PED-OT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C-60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility mu value of 0.41 cm(2\) V-1 s(-1), while the picene thin film FET showed p-channel enhancement-type characteristics with the p of 0.61 cm(2) V-1 s(-1). The p values recorded for C-60 and picene thin film FETs are comparable to those for C-60 and picene thin film FETs with Au electrodes. (C) 2009 Elsevier B.V. All rights reserved.