Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Published 2015 View Full Article

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Title
Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory
Authors
Keywords
Resistive switching, Thin film, Graphene, Hexagonal BN, Interfacial property
Journal
THIN SOLID FILMS
Volume 589, Issue -, Pages 188-193
Publisher
Elsevier BV
Online
2015-05-07
DOI
10.1016/j.tsf.2015.05.002

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