Characterization of electronic structure of Cu 2 ZnSn(S x Se 1−x ) 4 absorber layer and CdS/Cu 2 ZnSn(S x Se 1−x ) 4 interfaces by in-situ photoemission and inverse photoemission spectroscopies

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Characterization of electronic structure of Cu 2 ZnSn(S x Se 1−x ) 4 absorber layer and CdS/Cu 2 ZnSn(S x Se 1−x ) 4 interfaces by in-situ photoemission and inverse photoemission spectroscopies
Authors
Keywords
Copper zinc tin sulfoselenide, Cadmium selenide, Interface, Electronic structure, Electron spectroscopy
Journal
THIN SOLID FILMS
Volume 582, Issue -, Pages 166-170
Publisher
Elsevier BV
Online
2014-09-29
DOI
10.1016/j.tsf.2014.09.037

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.