Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Published 2015 View Full Article

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Title
Improved resistive switching properties by nitrogen doping in tungsten oxide thin films
Authors
Keywords
Resistive switching, Resistive random access memories, Tungsten oxide, Nitrogen doping
Journal
THIN SOLID FILMS
Volume 583, Issue -, Pages 81-85
Publisher
Elsevier BV
Online
2015-04-11
DOI
10.1016/j.tsf.2015.03.049

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