Journal
OPTICS EXPRESS
Volume 22, Issue 10, Pages 11627-11632Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.22.011627
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Funding
- National Natural Science Foundation of China [11374214, 10974135]
- National Minister of Education Program for Changjiang Scholars and Innovative Research Team in University (PCSIRT)
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Lateral photovoltaic effect (LPE) can be used in position-sensitive detectors (PSDs) and has a wide application in a variety of optical transducers and sensors. In this report, a large LPE with sensitivity of 42mV/mm is observed in metal-oxide-semiconductor (MOS) structure of Cr/SiO2/Si. Through measuring current-voltage characteristics, we find that electron transport property in dark plays a key role and an appropriate metal thickness is crucial for obtaining a large LPE. This result is useful for applications and may explore a way to study the electron transport mechanism in nano-films' MOS structures. (C) 2014 Optical Society of America
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