Journal
OPTICS EXPRESS
Volume 22, Issue 2, Pages 1661-1666Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.22.001661
Keywords
-
Categories
Funding
- National Nature Science Foundation [11374214, 10974135, 60776035]
- National Minister of Education Program for Changjiang Scholars and Innovative Research Team in University (PCSIRT)
Ask authors/readers for more resources
A large lateral photovoltaic effect (LPE) has been observed in a Cu2O/Si heterojunction structure when its surface is illuminated by a laser. Moreover, with external bias voltage, the maximal LPE sensitivity can reach up to 1114 mV/mm, which is almost 10 times larger compared with its initial non-biased value of 113 mV/mm. We ascribe this phenomenon mainly to the effect of the increased photo-generated holes caused by the bias. Giant output voltage and high sensitivity suggest the potential of Cu2O nano-films could be used in a wide variety of applications for position-sensitive photodetectors. (C) 2014 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available