4.6 Article

Bias-assisted improved lateral photovoltaic effect observed in Cu2O nano-films

Journal

OPTICS EXPRESS
Volume 22, Issue 2, Pages 1661-1666

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.22.001661

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Funding

  1. National Nature Science Foundation [11374214, 10974135, 60776035]
  2. National Minister of Education Program for Changjiang Scholars and Innovative Research Team in University (PCSIRT)

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A large lateral photovoltaic effect (LPE) has been observed in a Cu2O/Si heterojunction structure when its surface is illuminated by a laser. Moreover, with external bias voltage, the maximal LPE sensitivity can reach up to 1114 mV/mm, which is almost 10 times larger compared with its initial non-biased value of 113 mV/mm. We ascribe this phenomenon mainly to the effect of the increased photo-generated holes caused by the bias. Giant output voltage and high sensitivity suggest the potential of Cu2O nano-films could be used in a wide variety of applications for position-sensitive photodetectors. (C) 2014 Optical Society of America

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