4.6 Article

Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator

Journal

OPTICS EXPRESS
Volume 20, Issue 7, Pages 7081-7087

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.20.007081

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Funding

  1. National Natural Science Foundation of China (NSFC) [60977037]

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We demonstrate a 26 Gbit/s Mach-Zehnder silicon optical modulator. The doping concentration and profile are optimized, and a modulation efficiency with the figure of merit (V(pi)p) of 1.28 V.cm is achieved. We design an 80-nm-wide intrinsic silicon gap between the p-type and n-type doped regions to reduce the capacitance of the diode and prevent the diode from working in a slow diffusion mode. Therefore, the modulator can be driven with a small differential voltage of 0.5 V with no bias. Without the elimination of the dissipated power of the series resistors and the reflected power of the electrical signal, the maximum power consumption is 3.8 mW. (C) 2012 Optical Society of America

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