Journal
OPTICS EXPRESS
Volume 20, Issue 7, Pages 7142-7150Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.20.007142
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Funding
- National Science Foundation [0515684]
- ARO under Redondo Optics, Inc.
- Div Of Information & Intelligent Systems
- Direct For Computer & Info Scie & Enginr [0515684] Funding Source: National Science Foundation
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For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in similar to 200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts with increasing fluence; For the plasmonic structure on a substrate with surface defects, free carrier recombination dominates. The band gap emission spectral peak wavelength decreases 10-nm with increasing fluence, showing the transition from nonradiative-, at low excitation, to bimolecular-recombination at high carrier concentrations. (C) 2012 Optical Society of America
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