Journal
OPTICS EXPRESS
Volume 19, Issue 15, Pages 14690-14695Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.19.014690
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- European Community [224312 HELIOS]
- French ANR
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10 Gbit/s silicon modulator based on carrier depletion in interdigitated PN junctions is experimentally demonstrated. The phase-shifter is integrated in a ring resonator, and high extinction ratio larger than 10 dB is obtained in both TE and TM polarizations. V pi L pi of about 2.5 V x cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB. (C) 2011 Optical Society of America
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