Article
Optics
Jacob J. Ewing, Cheyenne Lynsky, Matthew S. Wong, Feng Wu, Yi Chao Chow, Pavel Shapturenka, Michel Iza, Shuji Nakamura, Steven P. Denbaars, James S. Speck
Summary: This article studied the method of achieving highly efficient long-wavelength InGaN LEDs through V-defect engineering, which utilized naturally occurring V-defects for lateral injection and improved the external quantum efficiency.
Article
Multidisciplinary Sciences
Tinh Binh Tran, Feras AlQatari, Quang-Ho Luc
Summary: A new method was developed to create a random nanophotonic crystal structure on a sapphire substrate without photolithography, which has the potential to enhance the light-extraction efficiency of deep ultraviolet light-emitting diodes. Simulations showed that integrating this NPhC significantly improved the LEE of DUV-LED devices compared to conventional ones.
SCIENTIFIC REPORTS
(2021)
Article
Chemistry, Multidisciplinary
Liliia Dvoretckaia, Vladislav Gridchin, Alexey Mozharov, Alina Maksimova, Anna Dragunova, Ivan Melnichenko, Dmitry Mitin, Alexandr Vinogradov, Ivan Mukhin, Georgy Cirlin
Summary: The direct integration of epitaxial III-V and III-N heterostructures on Si substrates provides a promising platform for the development of optoelectronic devices. This study presents the molecular beam epitaxy of ordered arrays of n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO2 substrates using cost-effective and rapid microsphere optical lithography. The fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs exhibit electroluminescence in a broad spectral range, with a maximum near 500 nm, which can be utilized for the development of multicolor or white light screens.
Review
Chemistry, Multidisciplinary
Shengjun Zhou, Xiaoyu Zhao, Peng Du, Ziqi Zhang, Xu Liu, Sheng Liu, L. Jay Guo
Summary: This review introduces the application of patterned sapphire substrates (PSS) in III-nitride emitters and summarizes the fabrication methods and nanoscale patterned structure definitions of PSS. Research shows that PSS can reduce the threading dislocation density (TDD) in epilayers and enhance the light extraction efficiency. The structural parameters of PSS also have an impact on LED performances. Finally, the challenges and potential prospects of PSS in future LED development are proposed.
Article
Chemistry, Physical
Pengkun Li, Lilin Wang, Shujing Sun, Chaoyang Tu, Chenlong Chen
Summary: The simultaneous epitaxial growth of films and horizontal nanowires in multi-dimensional GaN nanostructures on sapphire substrates reveals interesting phenomena and helps understand the growth characteristics of GaN more comprehensively. The controllability of GaN nanostructures is high, allowing for the control of nanowire width and length, film continuity, and even the presence of Au particles at the end of nanowires.
APPLIED SURFACE SCIENCE
(2021)
Article
Nanoscience & Nanotechnology
Andreas Liudi Mulyo, Anjan Mukherjee, Ida Marie Hoiaas, Lyubomir Ahtapodov, Tron Arne Nilsen, Havard Hem Toftevaag, Per Erik Vullum, Katsumi Kishino, Helge Weman, Bjorn-Ove Fimland
Summary: This study successfully demonstrates the fabrication of flip-chip ultraviolet light-emitting diodes based on self-assembled GaN/AlGaN nanocolumns, using single-layer graphene as both a growth substrate and a transparent conducting electrode. The high crystalline quality of the nanocolumns and the presence of intrinsic GaN quantum disk are confirmed through detailed electron microscopy characterization. The optical emission characteristics reveal the absence of defect-related yellow emission and the presence of blue-shifted emission, attributed to quantum confinement and strain effects.
ACS APPLIED NANO MATERIALS
(2021)
Article
Physics, Applied
Ah Hyun Park, Seungjae Baek, Go Bong Choi, Yoong Ahm Kim, Jinsub Lim, Tae Hoon Seo
Summary: In this study, green light emitting diodes (LEDs) with Au nanoclusters in a micro-hole patterned p-GaN layer (ANCs-MHPP) were demonstrated to have higher internal quantum efficiencies and faster decay times compared to conventional green LEDs. The remarkable opto-electronic performance of green LEDs with ANCs-MHPP is attributed to exciton-surface plasmon coupling and surface texturing effect caused by the micro-hole patterned p-GaN layer.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Do-Yeong Shin, Taehwan Kim, Ozgun Akyuz, Hilmi Volkan Demir, In-Hwan Lee
Summary: This study presents an improved efficiency design for white LEDs by integrating blue nanorod LEDs with green and red-emitting perovskite nanocrystal films. The design utilizes the localized surface plasmon effect of Ag@SiO2 nanoparticles to enhance the photoluminescence intensity of blue LEDs, while the high-power blue LED backlight improves the perovskite photoluminescence intensity. The resulting white LED with Ag@SiO2 nanoparticle-embedded nanorods demonstrates a 62% increase in photoluminescence intensity compared to planar white LEDs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Engineering, Electrical & Electronic
Feisong Qin, Min Lu, Siqi Sun, Po Lu, Nannan Feng, Yanbo Gao, Xue Bai, Zhennan Wu, Junhua Hu, Yu Zhang
Summary: Introduces the use of PMMA modified printing paper as substrates for highly flexible red-emitting perovskite light emitting diodes (PeLEDs), which have easy synthesis and excellent optoelectronic properties. This extension of technology widens the opportunity of PeLEDs in extremely flexible and inexpensive applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Minghang Li, Wencheng Chen, Jiasheng Zhang, Shuming Bai, Jiarong Zeng, Xueliang Zhu, Kelvin H. L. Zhang, Qijin Cheng, Kostya (Ken) Ostrikov
Summary: AlN is commonly used as a buffer layer in GaN-based LEDs, but when applied on patterned sapphire substrate (PSS), it leads to undesired screw dislocations in the epitaxial layer of GaN. This study demonstrates the use of sputtered AlON buffer layer on industry-grade four-inch PSS to improve the quality of GaN epitaxial layers and enhance the performance of GaN-based blue LEDs. The addition of oxygen to AlN reduces the density of screw dislocations, providing insights into the growth mechanisms and guiding the development of next-generation optoelectronic technologies.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Optics
Chadwick L. Canedy, William W. Bewley, Stephanie Tomasulo, Chul Soo Kim, Charles D. Merritt, Igor Vurgaftman, Jerry R. Meyer, Mijin Kim, Thomas J. Rotter, Ganesh Balakrishnan, Terry D. Golding
Summary: The study demonstrates the high-quality growth of interband cascade light emitting devices (ICLEDs) on silicon substrates, showing good performance and manufacturing advantages. Despite some leakage current issues with the silicon devices, the efficiency at high continuous wave current remains at 75% of devices grown on GaSb.
Article
Physics, Applied
Mei Cui, Chenyu Guo, Zhenhai Yang, Li Chen, Yijun Dai, Houqiang Xu, Wei Guo, Jichun Ye
Summary: This paper investigates the application of conductive dielectric distributed Bragg reflectors (DBRs) in GaN-based light emitters. A conductive DBR was fabricated using the electrical breakdown technique. The optical simulations and electrical tests demonstrated its excellent performance. The conductive mechanisms were elaborated by comparing different metal electrodes. Ultimately, a conductive DBR with high reflectivity was successfully prepared.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Loganathan Veeramuthu, Chia-Jung Cho, Fang-Cheng Liang, Manikandan Venkatesan, G. Ranjith Kumar, Hua-Yi Hsu, Ren-Jei Chung, Chen-Hung Lee, Wen-Ya Lee, Chi-Ching Kuo
Summary: Wearable skin-inspired electronic skins have made remarkable progress in recent years, with promising features such as comfort, lightweight, and durability, leading to significant advancements in wearable sensors and optoelectronics.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Review
Materials Science, Multidisciplinary
Muhammad Usman, Munaza Munsif, Urooj Mushtaq, Abdur-Rehman Anwar, Nazeer Muhammad
Summary: Efficiency issues in green light-emitting diodes are a major concern in the solid-state lighting industry. Researchers are exploring methods to address this issue by reducing inherent problems such as defect density and internal electric fields in order to improve the performance of green light-emitting diodes.
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
(2021)
Article
Chemistry, Multidisciplinary
Lei Liu, Xu Zhang, Shouzhi Wang, Guodong Wang, Jiaoxian Yu, Xiaobo Hu, Qingjun Xu, Xiangang Xu, Lei Zhang
Summary: This study investigates the growth behavior of GaN on porous substrates during the nucleation stage, revealing that the porous structure reduces dislocations and relieves stress. The findings have important reference value for the growth of GaN crystals on porous substrates.
