4.6 Article

High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity

Journal

OPTICS EXPRESS
Volume 18, Issue 8, Pages 8144-8150

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.18.008144

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Funding

  1. Ministry of Education, Culture, Sports, Science and Technology, Japan [20760030]
  2. Grants-in-Aid for Scientific Research [20760030] Funding Source: KAKEN

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We report a high-Q design for a semiconductor-based two-dimensional zero-cell photonic crystal (PhC) nanocavity with a small mode volume. The optimization of displacements of hexagonal-lattice air holes in the Gamma-M direction, in addition to the Gamma-K direction, resulted in a cavity quality factor Q of 2.8 x 10(5) sustaining the small modal volume of 0.23(lambda(0)/n)(3). The momentum space consideration of out-of-plane radiation loss showed that the optimization of air hole displacements in both the in-plane x and y directions reduced FT components in the leaky region along the k(x) and k(y) axes, respectively. This high-Q cavity design is applicable to Si and GaAs semiconductor materials. (c) 2010 Optical Society of America

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