Journal
OPTICS EXPRESS
Volume 18, Issue 23, Pages 23891-23899Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.18.023891
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Funding
- Intel
- Defense Advanced Research Projects Agency (DARPA) [W911NF-05-1-0175]
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We demonstrate an integrated triplexer on silicon with a compact size of 1mm by 3.5mm by utilizing a selective area wafer bonding technique. The wavelength demultiplexer on the triplexer chip successfully separates signals at wavelengths of 1310nm, 1490nm and 1550nm with more than 10dB extinction ratio. The measured 3dB bandwidth of the integrated laser and photodetectors are 2GHz and 16GHz, respectively. Open eye diagrams are also measured for the integrated photodetector up to 12.5GHz PRBS inputs. (C) 2010 Optical Society of America
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