Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2

Published 2010 View Full Article

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Title
Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2
Authors
Keywords
-
Journal
OPTICS EXPRESS
Volume 18, Issue 2, Pages 1462
Publisher
The Optical Society
Online
2010-01-13
DOI
10.1364/oe.18.001462

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