Journal
OPTICS EXPRESS
Volume 18, Issue 25, Pages 25596-25607Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.18.025596
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Funding
- Oracle [HR0011-08-9-0001]
- Focus Center Research Program
- Semiconductor Research Corporation
- Stanford Graduate Fellowship
- National Science Foundation [ECS-9731293]
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We measure the intervalley scattering time of electrons in the conduction band of Ge quantum wells from the direct Gamma valley to the indirect L valley to be similar to 185 fs using a pump-probe setup at 1570 nm. We relate this to the width of the exciton peak seen in the absorption spectra of this material, and show that these quantum wells could be used as a fast saturable absorber with a saturation fluence between 0.11 and 0.27 pJ/mu m(2). We also observe field screening by photogenerated carriers in the material on longer timescales. We model this field screening by incorporating carrier escape from the quantum wells, drift across the intrinsic region, and recovery of the applied voltage through diffusive conduction. (C) 2010 Optical Society of America
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