High responsivity GaNAsSb p-i-n photodetectors at 13µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

Published 2008 View Full Article

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Title
High responsivity GaNAsSb p-i-n photodetectors at 13µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy
Authors
Keywords
-
Journal
OPTICS EXPRESS
Volume 16, Issue 11, Pages 7720
Publisher
The Optical Society
Online
2008-05-15
DOI
10.1364/oe.16.007720

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