Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

Published 2014 View Full Article

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Title
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
Authors
Keywords
-
Journal
OPTICAL ENGINEERING
Volume 53, Issue 10, Pages 107106
Publisher
SPIE-Intl Soc Optical Eng
Online
2014-10-17
DOI
10.1117/1.oe.53.10.107106

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