Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon

Published 2014 View Full Article

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Title
Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon
Authors
Keywords
-
Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 332, Issue -, Pages 298-302
Publisher
Elsevier BV
Online
2014-04-02
DOI
10.1016/j.nimb.2014.02.082

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