Ion implantation effects in single crystal Si investigated by Raman spectroscopy

Published 2009 View Full Article

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Title
Ion implantation effects in single crystal Si investigated by Raman spectroscopy
Authors
Keywords
-
Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 267, Issue 8-9, Pages 1232-1234
Publisher
Elsevier BV
Online
2009-01-28
DOI
10.1016/j.nimb.2009.01.021

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