Development of n-on-p silicon sensors for very high radiation environments

Published 2010 View Full Article

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Title
Development of n-on-p silicon sensors for very high radiation environments
Authors
Keywords
-
Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume 636, Issue 1, Pages S24-S30
Publisher
Elsevier BV
Online
2010-05-03
DOI
10.1016/j.nima.2010.04.080

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