Performance improvement in novel germanium–tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor

Published 2015 View Full Article

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Title
Performance improvement in novel germanium–tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor
Authors
Keywords
Tunneling field effect transistor (TFET), Band to band tunneling (BTBT), Germanium–tin, Heterostructure
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 83, Issue -, Pages 401-410
Publisher
Elsevier BV
Online
2015-03-31
DOI
10.1016/j.spmi.2015.03.030

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