Design of high breakdown voltage GaN vertical HFETs with p-GaN buried buffer layers for power switching applications

Published 2015 View Full Article

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Title
Design of high breakdown voltage GaN vertical HFETs with p-GaN buried buffer layers for power switching applications
Authors
Keywords
GaN HFET, Vertical, Heterostructure, Breakdown, Buried buffer layer
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 83, Issue -, Pages 251-260
Publisher
Elsevier BV
Online
2015-04-02
DOI
10.1016/j.spmi.2015.03.039

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