Journal
NEW JOURNAL OF PHYSICS
Volume 12, Issue -, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1367-2630/12/8/083013
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Funding
- National Science Council (NSC) of ROC [NSC-96-2112-M-006-011-MY3]
- National Natural Science Foundation of China [10904029]
- Research Grants Council of Hong Kong [604709]
- National Center for Theoretical Science of the NSC
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In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.
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