Current density–voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H2 gas flow rates
Current density–voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H2 gas flow rates
Authors
Keywords
Silicon carbide, Nanocrystalline, Hot-wire chemical vapor deposition, Heterojunction, Current density–voltage characteristics, Admittance characteristics
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now