Journal
SOLID STATE COMMUNICATIONS
Volume 204, Issue -, Pages 67-71Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2014.12.015
Keywords
MoS2/ZnO (0001) heterojunction; Interfacial micro-structure; Conducting type; First principles
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Funding
- Zhejiang Provincial Natural Science Foundation of China [Y1110777]
- National Natural Science Foundation of China [61006051]
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The stability and the electronic properties of a monolayer MoS2 adsorbed on the O-terminated ZnO (0001) have been investigated by using the first-principles approach. By changing the surface of ZnO substrate, we hod that the conductivity of ultrathin semiconducting LTMDs changes from n- to p-type conducting depending on the microstructure of the ZnO surface. We find that MoS2/ZnO based on clean ZnO substrate shows p-type conductivity; while the MoS2/ZnO based on ZnO with coverage of 1/2 monolayer of hydrogen becomes an intrinsic semiconductor, the MoS2/ZnO based on ZnO with coverage of one monolayer of hydrogen turns into n-type semiconductor. This can pave the way for a new strategy in the design of two-dimensional devices, where the electronic properties of the channel are engineered by manipulating those of the substrate. (C) 2015 Elsevier Ltd. All rights reserved.
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