Article
Chemistry, Physical
S. Abhirami, E. P. Amaladass, K. Saravanan, C. David, S. Amirthapandian, R. M. Sarguna, Awadhesh Mani
Summary: Ion irradiation with antimony ions has been used to induce isoelectronic doping in thin films of bismuth selenide, leading to changes in magnetoresistance behavior and quantum coherence signatures. The irradiation is found to alter the electronic transport properties and coherence phenomena in Bi2Se3-based topological insulator systems.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Multidisciplinary
Sepideh Izadi, Jeong Woo Han, Sarah Salloum, Ulrike Wolff, Lauritz Schnatmann, Aswin Asaithambi, Sebastian Matschy, Heike Schloerb, Heiko Reith, Nicolas Perez, Kornelius Nielsch, Stephan Schulz, Martin Mittendorff, Gabi Schierning
Summary: By compacting 3D TI nanoparticles through hot pressing into macroscopic nanograined bulk samples, the dominance of bulk carriers in transport properties has been overcome, showcasing metallic-like electrical transport properties and weak antilocalization. These samples exhibit a dominance of surface transport at low frequencies with high mobility, demonstrating important technical applications.
Article
Materials Science, Multidisciplinary
Yixuan Ren, Yuqi Li, Xingzhao Liu
Summary: A van der Waals heterojunction was successfully constructed using molecular beam epitaxy with topological insulator (TI) Bi2Se3 and traditional narrow-gap PbSe, showing high-quality crystallization and an atomically abrupt heterointerface. The as-fabricated Bi2Se3-PbSe photodetector achieved prominent photosensitivity in the infrared band, with responsivity and detectivity under zero bias reaching 3.9 A W^-1 and 8.7 x 10^11 cm Hz^0.5 W^-1, respectively. The fast response speed, along with the high photosensitivity, suggests that the construction of TI Bi2Se3-PbSe heterojunction is a promising solution for high-performance infrared photodetectors.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Review
Chemistry, Physical
Kushal Mazumder, Parasharam M. Shirage
Summary: Topological Insulators are a new class of materials with gapless surface states and potential applications. Bi2Se3, with high bulk band gap and unique surface states, shows outstanding performance in transport properties, thin films, and nanoparticle applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Sofia Ferreira-Teixeira, Alexander Vanstone, Ana L. Pires, Will R. Branford, Joao P. Arafijo, Lesley F. Cohen, Andre M. Pereira
Summary: This study investigates the structural, electrical, and thermal transport properties of ion beam sputtered Sb2Te3 thin films. The results show high resistivity and coexistence of n-type and p-type conduction in these films. Weak antilocalization peaks in magnetoconductance and magnetic localization length suggest the presence of a 2D conduction channel and features of a topological insulator surface state in these films at low temperatures.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Dedi, Ping-Chung Lee, Pai-Chun Wei, Yang-Yuan Chen
Summary: This study reports on the thermoelectric properties of topological insulator bismuth selenide nanowires, achieved using a specially designed platform for simultaneous measurements on a single wire. Experimental results on the properties of conductivity, Seebeck coefficient, and thermal conductivity were found to be in good agreement with theoretical studies.
Article
Materials Science, Multidisciplinary
Sumit Bera, P. Behera, R. Venkatesh, Uday Deshpande, P. Garg, V Ganesan
Summary: The magnetotransport and thermoelectric properties of Bi2-xCoxTe3 nanomaterials are influenced by the incorporation of cobalt, resulting in a significant change in the electrical resistivity behavior, possibly due to electron-electron interaction and quantum interference effect.
Article
Chemistry, Multidisciplinary
Peng Li, Jinjun Ding, Steven S-L Zhang, James Kally, Timothy Pillsbury, Olle G. Heinonen, Gaurab Rimal, Chong Bi, August DeMann, Stuart B. Field, Weigang Wang, Jinke Tang, Jidong Samuel Jiang, Axel Hoffmann, Nitin Samarth, Mingzhong Wu
Summary: This study reports a genuine topological Hall effect in a TI/MI structure, where the contribution of skyrmions to the Hall effect outweighs the coexistence of magnetic phases.
Article
Multidisciplinary Sciences
Sudhanshu Gautam, V Aggarwal, Bheem Singh, V. P. S. Awana, Ramakrishnan Ganesan, S. S. Kushvaha
Summary: In this study, Bi2Se3 thin films of different thicknesses were grown on sapphire substrates using radio frequency magnetron sputtering technique. The physical properties and conduction mechanism of the films were characterized using various techniques. The results showed that the films exhibited metallic nature and gapless topological surface states at low temperatures, and a positive magneto-resistance effect in magnetic fields. The conduction mechanism varied with the thickness of the films.
SCIENTIFIC REPORTS
(2022)
Article
Nanoscience & Nanotechnology
Priyanath Mal, Bipul Das, Archana Lakhani, G. Bera, G. R. Turpu, C. V. Tomy, Pradip Das
Summary: This study reports the experimental realization of Dirac Fermions in 3D topological insulators by observing SdH oscillations with pi-Berry phase in PbBi2-xFexTe4, showing the existence of non-trivial topological surface states. The massless carriers with Fermi velocity around 10(5) ms(-1) depict their relativistic nature and the linear Dirac dispersion of topological surface states. The observed weak antilocalization and modified Hikami-Larkin-Nagaoka equation support the presence of 2D surface states with carriers moving around the Dirac point acquiring pi-Berry phase.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2021)
Article
Physics, Condensed Matter
Christian Riha, Birkan Duezel, Karl Graser, Olivio Chiatti, Evangelos Golias, Jaime Sanchez-Barriga, Oliver Rader, Oleg E. Tereshchenko, Saskia F. Fischer
Summary: This passage discusses the research results of vanadium-doped Bi(2-x)Te(2.4)Se(0.6) single crystals grown by the Bridgman method, showing significant effects of vanadium concentration on resistivity, Hall charge carrier density, and mobility. The characteristics remain constant at low temperatures, and magnetoresistance exhibits weak antilocalization for both vanadium concentrations.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Raj Kumar, Cristian V. Ciobanu, Somilkumar J. Rathi, Joseph E. Brom, Joan M. Redwing, Frank Hunte
Summary: This study reports on the manifestations of superconducting electrons carried by topological surface states (TSS) in Bi2Se3 films. By measuring the magnetoresistance (MR) and anisotropic magnetoresistance (AMR), key features of TSS-carried Cooper pairs are uncovered. These findings can guide novel developments in superconductor/topological insulator quantum devices relying on supercurrent detection and lead to more refined transport signatures of Majorana zero-modes in the future.
Article
Nanoscience & Nanotechnology
Youqiang Huang, Gongxun Bai, Yingjie Zhao, Yuan Liu, Shiqing Xu, Jianhua Hao
Summary: Enhanced near-infrared photo-thermal conversion efficiency is achieved in topological Bi2Se3 nanosheets by introducing a lanthanide dopant, providing new insights for the increase in the efficiency of photothermal materials.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Valentino Pistore, Leonardo Viti, Chiara Schiattarella, Elisa Riccardi, Craig S. Knox, Ahmet Yagmur, Joel J. Burton, Satoshi Sasaki, A. Giles Davies, Edmund H. Linfield, Joshua R. Freeman, Miriam S. Vitiello
Summary: This study investigates the presence of massless surface carriers in Bi2Se3 thin films through terahertz frequency scattering near-field optical microscopy. By probing plasmon polaritons, the density and nature of surface carriers are determined, providing opportunities in THz nano-plasmonics and topological nano-photonics.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Physics, Multidisciplinary
Tatyana B. Nikulicheva, Vasilii S. Zakhvalinskii, Evgeny A. Pilyuk, Oleg N. Ivanov, Alexander A. Morocho, Vitaly B. Nikulichev, Maksim N. Yapryntsev
Summary: In this work, the results of magnetoresistance examination for a Cd3As2 thin film deposited on sapphire substrate are presented. It was found that weak antilocalization effect exists in the temperature range of 2-10 K. The weak antilocalization is caused by surface states and can be well described by the Hikami-Larkin-Nagaoki model. The calculated phase coherence length L phi changes with temperature T according to the power law L phi -T-0.43, indicating the presence of 2D topological surface states.
CHINESE JOURNAL OF PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Isha Yadav, Surbhi Jain, Shalik Ram Joshi, Anshu Goyal, Monika Tomar, Sudha Gupta, Shankar Dutta, Ratnamala Chatterjee
Summary: The electrical and thermal properties of RF sputtered TiOₓ films were studied and it was found that higher oxygen content can increase the temperature coefficient of resistivity (TCR), while an increase in film thickness can increase the thermal conductivity, which is independent of the stoichiometry.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Physics, Applied
Deepika Rani, Devendra K. Pandey, Yuta Kimura, Rie Y. Umetsu, Ratnamala Chatterjee
Summary: This study presents the structural, magnetic, and transport properties of epitaxial thin films of equiatomic quaternary CoFeCrGa grown on a single crystal MgO(001) substrate. The film exhibits ordered, epitaxial, and homogeneous characteristics. It displays soft ferromagnetic behavior, semiconductor-like resistivity with low temperature coefficient, and non-saturating linear magnetoresistance. The possibility of spin-gapless semiconducting nature in this film suggests its suitability for spin-based device applications.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
K. Chen, C. Luo, Y. Zhao, F. Baudelet, A. Maurya, A. Thamizhavel, U. K. Roessler, D. Makarov, F. Radu
Summary: In rare-earth compounds, the proximity of the 4f level to the Fermi energy leads to instabilities of the charge configuration and the magnetic moment. We provide experimental evidence for induced magnetic polarization of the Eu3+ atomic shell due to interactions with the Eu2+ atomic shell. Applying external pressure leads to a transition from antiferromagnetic to fluctuating behavior in EuNiGe3 single crystals, with observed magnetic polarization for both Eu2+ and Eu3+ valence states.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Soumi De, Deepak Asthana, Chinthakuntla Thirmal, Sudhir K. Keshri, Ram Krishna Ghosh, Geeta Hundal, Raju Kumar, Satyendra Singh, Ratnamala Chatterjee, Pritam Mukhopadhyay
Summary: Organic molecules with an active dipole moment tend to align antiparallel in the solid state, resulting in no macroscopic polarization. However, a crystalline organic material has been discovered that self-assembles with a polar order and exhibits high piezoelectricity, ferroelectricity, and second harmonic generation activity. These findings open up new design possibilities for opto-, electro-, and mechano-responsive materials.
Article
Physics, Applied
Hitesh Kumar, Divya Prakash Dubey, Ratnamala Chatterjee
Summary: This study highlights the antiferroelectric (AFE) phase stabilizing effect of Bi substitution at the A-site in Pb[(Zr0.7Sn0.3)(0.938)Ti-0.062]O-3. Bi substitution at 1% lies just outside the morphotropic phase boundary (MPB) and introduces disorder and randomness, significantly affecting the electromechanical property like strain (S-max approximately 0.3%). By optimizing the Bi inclusion and adjusting the B-site composition, the system can be brought back to MPB, resulting in strain values of S-max approximately 0.44% and S-rem approximately 0.27% for the optimized MPB composition Pb0.985Bi0.01[(Zr0.7Sn0.3)(0.933)Ti-0.067]O-3.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Durgesh Kumar Ojha, Ratnamala Chatterjee, Yu-Lon Lin, Yu-Hui Wu, Po-Wen-Chen, Yuan-Chieh Tseng
Summary: The influence of inter-mixing chemical state on the damping-torque efficiency of a spin-orbit torque heterostructure was investigated. By using AR-XPS, XAS, and XMCD techniques, the composition-gradient effects on the damping-torque efficiency of the Bi2Se3/insertion/CoFeB SOT devices were studied. The results showed that the Pt-0.5 nm sample had larger spin-orbit coupling and spin-polarization effects, validating its higher damping-torque efficiency.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2023)
Article
Physics, Condensed Matter
Sawani Datta, Ram Prakash Pandeya, Arka Bikash Dey, A. Gloskovskii, C. Schlueter, T. R. F. Peixoto, Ankita Singh, A. Thamizhavel, Kalobaran Maiti
Summary: We studied the electronic structure of CeAgAs2, an antiferromagnetic Kondo lattice system, using hard x-ray photoemission spectroscopy. The results show surface-bulk differences, complex interplay of intra- and inter-layer covalency, and electron correlation in the electronic structure of CeAgAs2. The Ce and As core level spectra reveal strong hybridization and correlation effects. The bulk spectra exhibit additional interactions not present in the surface spectra. Temperature dependence of the spectra indicates a Kondo-like behavior.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Chemistry, Physical
A. Bhattacharya, I. Timokhin, R. Chatterjee, Q. Yang, A. Mishchenko
Summary: This article introduces a method of automatically searching and classifying 2D flat band materials using machine learning algorithms. By combining supervised and unsupervised learning algorithms, a convolutional neural network is used to identify 2D flat band materials, which are then subjected to symmetry-based analysis using a bilayer unsupervised learning algorithm. This method helps construct a database of 2D materials and reveals material classes beyond the known flat band paradigms.
NPJ COMPUTATIONAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Gourav Dwari, Souvik Sasmal, Shovan Dan, Bishal Maity, Vikas Saini, Ruta Kulkarni, Soma Banik, Rahul Verma, Bahadur Singh, Arumugam Thamizhavel
Summary: A single crystal of GdBi compound was grown using the flux method, and it crystallizes in a rock-salt-type cubic crystal structure with the space group Fm3 over bar m. Electrical and magnetic measurements were performed on well-oriented single crystals, confirming the antiferromagnetic ordering of the Gd moments at TN = 27.5 K. The magnetization measurement at 2 K along the [100] direction showed a lower value of 1.3 μB/Gd compared to its saturation value of 7 μB. The magnetoresistance reached 104% with no saturation at 2 K in a field of 14 T, and Shubnikov-de Hass oscillations were observed in the high field range of the magnetoresistance.
Article
Materials Science, Multidisciplinary
Suman Nandi, Souvik Sasmal, Bishal Baran Maity, Vikash Sharma, Gourav Dwari, Ruta Kulkarni, A. Thamizhavel
Summary: A single crystal of NbReSi with a hexagonal structure and noncentrosymmetric space group P6 over bar 2m (No. 189) was grown by the Czochralski method. Its anisotropic physical properties were investigated through measurement of magnetic susceptibility and electrical transport. The superconducting transition temperature (Tc) is 6.1 K and the upper critical field (Hc2) values are 8.39 T and 11.65 T for different field orientations. The presence of strong pinning in the sample is indicated by a calculated critical current of the order 104 A/cm2.
Letter
Optics
S. Pathak, A. E. Russo, S. K. Seritan, A. D. Baczewski
Summary: We investigate whether investing additional quantum resources in preparing a ground state improves the aggregate runtime for estimating its energy. We analyze Lin and Tong's near-optimal state preparation algorithm and demonstrate its near quadratic reduction in T-gate count for ground-state-energy estimation. We provide resource estimates specifying the conditions where the added cost of state preparation is worthwhile.
Article
Materials Science, Multidisciplinary
Deepika Rani, P. C. Sreeparvathy, K. G. Suresh, Ratnamala Chatterjee, Aftab Alam
Summary: We report a class of spin gapless semiconductors (SGSs) with topological nontrivial features and fully compensated ferrimagnetic behavior in VTaNbAl, a quaternary Heusler alloy. These compounds have a unique band structure with opposite spin characters in the valence and conduction band edges, making them potential candidates for spin valves and a large anomalous Nernst effect. Despite the compensated ferrimagnetic behavior, VTaNbAl shows a reasonably large anomalous Hall effect possibly due to the intrinsic nonvanishing Berry curvature.
Article
Materials Science, Multidisciplinary
Anupam Bhattacharya, Vishal Bhardwaj, Meha Bhogra, B. K. Mani, Umesh Waghmare, Ratnamala Chatterjee
Summary: A first-principles theoretical characterization is presented for the electronic topology of the antiferromagnetic half-Heusler alloy DyPdBi, which is classified as a triple-point semimetal and a Weyl semimetal in two different magnetic states. The Berry curvature calculations show that the triple-point fermions exhibit a peak in the anomalous Hall conductivity, while the Weyl fermions do not. These two topologically distinct magnetic states can be switched and distinguished experimentally from anomalous Hall conductance.
Article
Materials Science, Multidisciplinary
Ranjana Rathore, Abhishek Pathak, Mayanak K. Gupta, Ranjan Mittal, Ruta Kulkarni, A. Thamizhavel, Himanshu Singhal, Ayman H. Said, Dipanshu Bansal
Summary: Charge density wave (CDW) induces periodic modulation of charge density, leading to electronic band-gap opening on Fermi level. In this study, we investigate the CDW distortion and hysteresis in EuTe4 using x-ray scattering. We observe multiple commensurate and incommensurate CDW wave vectors and confirm the presence of competing CDW orders. We also discover nondegenerate metastable states during the hysteretic transition.
Article
Physics, Applied
Sawani Datta, Ram Prakash Pandeya, Arka Bikash Dey, A. Gloskovskii, C. Schlueter, T. R. F. Peixoto, Ankita Singh, A. Thamizhavel, Kalobaran Maiti
Summary: In this study, the electronic structure of CeCuX2 (X = As/Sb) system was investigated using hard x-ray photoemission spectroscopy. The results reveal significant differences in the surface and bulk electronic structure between different materials. Additionally, distinct spectral features were observed in the Kondo system, which calls for physics beyond existing theories.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Condensed Matter
Shivani Gohri, Jaya Madan, Rahul Pandey
Summary: This study improves the efficiency of SnS-based solar cells by implementing the glancing angle deposition approach and introducing a CZTSSe layer. The findings offer valuable insights for enhancing the design of SnS-based solar cells and making them more efficient.
SOLID STATE COMMUNICATIONS
(2024)
Article
Physics, Condensed Matter
Mahboubeh Yeganeh, Davoud Vahedi Fakhrabad
Summary: The lattice thermal conductivity of CdO monolayer was investigated, and it was found to be lower than that of bulk CdO due to the lower phonon lifetime and phonon group velocity. As a result, the monolayer exhibits higher thermoelectric efficiency compared to the bulk counterpart.
SOLID STATE COMMUNICATIONS
(2024)
Article
Physics, Condensed Matter
Shivam Srivastava, Prachi Singh, Anjani K. Pandey, Chandra K. Dixit
Summary: In this research paper, a novel equation of state (EOS) based on finite strain theories is proposed for predicting the thermo elastic properties of various materials. Extensive analysis and comparison with existing models and experimental data demonstrate the validity and effectiveness of the proposed EOS in capturing the unique thermodynamic behavior of nanomaterials, bulk metallic glasses, and superconductors. This research is of great importance in the fields of materials science, nanotechnology, and condensed matter physics.
SOLID STATE COMMUNICATIONS
(2024)
Article
Physics, Condensed Matter
Subrata Das, Sanjoy Kr Mahatha, Konstantin Glazyrin, R. Ganesan, Suja Elizabeth, Tirthankar Chakraborty
Summary: In this study, we investigated the structural evolution of Tb2Ti2O7 under external pressure and temperature, and confirmed the occurrence of an isostructural phase transition beyond 10 GPa pressure. This transition leads to changes in lattice parameters and mechanical properties, which can be understood in terms of localized rearrangement of atoms.
SOLID STATE COMMUNICATIONS
(2024)
Article
Physics, Condensed Matter
Hamze Mousavi
Summary: It has been found that undoped graphene sheet has zero states at the Fermi energy level, making it difficult for Cooper pairing to occur in the superconductive state. However, T-graphene, with physical properties similar to graphene, exhibits metallic behavior and has available electron states near the Fermi level. The gap equation for the s-wave superconductive state is derived based on the attractive Hubbard model and the Bogoliubov de Gennes equation for this two-dimensional metallic system. It is found that a nonzero critical temperature, τ, exists for different levels of electron-electron interaction, ǫ. τ has higher values when the system has electronic half band-filling, but decreases when the system does not have half band-filling. However, τ vanishes when ǫ becomes small enough near the band edges.
SOLID STATE COMMUNICATIONS
(2024)
