Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 135, Issue -, Pages 43-48Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2014.09.018
Keywords
Cuprous oxide; Spatial atmospheric ALD; ZnO/Cu2O heterojunction; Inorganic solar cell
Funding
- Cambridge Overseas and Commonwealth Trust
- Rutherford Foundation of New Zealand, Girton College Cambridge
- ERC Advanced Investigator Grant, Novox [ERC-2009-adG247276]
- EPSRC [RGS3717]
Ask authors/readers for more resources
Zn1-xMgxO/Cu2O heterojunctions were successfully fabricated in open-air at low temperatures via atmospheric atomic layer deposition of Zn1-xMgxO on thermally oxidized cuprous oxide. Solar cells employing these heterojunctions demonstrated a power conversion efficiency exceeding 2.2% and an open-circuit voltage of 0.65 V. Surface oxidation of Cu2O to CuO prior to and during Zr1-xMgxO deposition was identified as the limiting factor to obtaining a high quality heterojunction interface. Optimization of deposition conditions to minimize Cu2O surface oxidation led to improved device performance, tripling the open-circuit voltage and doubling the short-circuit current density. These values are the highest reported for a ZnO/Cu2O interface formed in air, and highlight atmospheric ALD as a promising technique for inexpensive and scalable fabrication of ZnO/Cu2O heterojunctions. (C) 2014 The Authors. Published by Elsevier B.V.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available