Journal
NATURE MATERIALS
Volume 7, Issue 4, Pages 270-271Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/nmat2145
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A method of writing and erasing conducting nanostructures at the interface between the wide-bandgap insulators LaAlO3 and SrTiO3 is presented. New developments for ultrahigh-density information storage look feasible.
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