Journal
NANOTECHNOLOGY
Volume 29, Issue 46, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aadf63
Keywords
nanowire; phototransistor; synaptic function
Funding
- National Natural Science Foundation of China [61774021, 61504010, 61674020]
- Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), P R China [IPOC2017ZT02, IPOC2017ZZ01]
- Fundamental Research Funds for the Central Universities [2018XKJC05]
- BUPT Excellent PhD Students Foundation [CX2018314]
- Hong Kong Scholars Program [XJ2018052]
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We demonstrate a nanowire (NW) phototransistor with synaptic behavior based on inherent persistent photoconductivity. The device is comprised of a single crystalline InAs NW, covered by a native indium oxide layer acting as the photogating layer (PGL). In the negative photoresponse range, the device mimics synaptic neuromorphic behaviors of short-term plasticity, long-term plasticity (LTP), and paired-pulse facilitation. Moreover, the transition from short-term to LTP is observed as the stimulus intensity increases, behaving in accord with the feature of cooperativity. The synaptic behaviors of the device are attributed to the photo-generated electrons trapped/detrapped in the PGL. This NW-based photonic synaptic device would find promising applications in neuromorphic systems and networks.
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