Journal
NANOTECHNOLOGY
Volume 29, Issue 42, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aad75e
Keywords
HfO2 -based ferroelectrics; graphene; memories
Funding
- Ministery of Research and Innovation, CNCS-UEFISCDI [PN-III-P4-ID-PCCF-2016-0033]
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We have fabricated and electrically characterized at the wafer scale tens of metal-ferroelectric (HfZrO)-semiconductor capacitors and metal-graphene monolayer-ferroelectric (HfZrO)-semiconductor capacitors with the same top electrode dimensions. We have found that the memory windows of the capacitors containing graphene are 3-4 times larger than the ferroelectric capacitors without graphene, and increase even more after annealing. This physical effect can be attributed to the additional electric field exerted by the graphene monolayer on the HfZrO ferroelectric semiconductor capacitor, and to the negative thermal extension coefficient of graphene, respectively.
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