Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device

Published 2018 View Full Article

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Title
Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 29, Issue 41, Pages 415204
Publisher
IOP Publishing
Online
2018-07-27
DOI
10.1088/1361-6528/aad64c

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