Journal
NANOTECHNOLOGY
Volume 25, Issue 27, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/25/27/275201
Keywords
silicon transistor; noise; single electron; counting statistics
Funding
- JSPS [GR103]
Ask authors/readers for more resources
We report the observation of thermal noise in the motion of single electrons in an ultimately small dynamic random access memory (DRAM). The nanometer-scale transistors that compose the DRAM resolve the thermal noise in single-electron motion. A complete set of fundamental tests conducted on this single-electron thermal noise shows that the noise perfectly follows all the aspects predicted by statistical mechanics, which include the occupation probability, the law of equipartition, a detailed balance, and the law of kT/C. In addition, the counting statistics on the directional motion (i.e., the current) of the single-electron thermal noise indicate that the individual electron motion follows the Poisson process, as it does in shot noise.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available