Journal
NANOTECHNOLOGY
Volume 25, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/25/7/075201
Keywords
Ge nanowires; nonvolatile memory; field-effect transistors; core-shell
Funding
- National Basic Research Development Program of China (973 Program) [2010CB934503, 2011CB808404]
- National Natural Science Foundation of China [61006015, 51033007, 61274019]
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Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide.
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