4.6 Article

Identifying the mechanisms of p-to-n conversion in unipolar graphene field-effect transistors

Journal

NANOTECHNOLOGY
Volume 24, Issue 19, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/19/195202

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The mechanisms of p-to-n conversion and vice versa in unipolar graphene field-effect transistors (GFETs) were systematically studied using Raman spectroscopy. Unipolar p-type GFETs are achieved by decorating the graphene surface with a thin layer of titanium (Ti) film, resulting in a Raman D peak. The D peak is observed to recover by annealing the GFET in nitrogen ambient followed by silicon nitride. (Si3N4)deposition, suggesting that the Ti adatoms are being partially removed. Furthermore, unipolar n-type GFETs are obtained after the passivation on p-type GFETs. The threshold voltage of the n-type GFET is dependent on the thickness of the Si3N4 layer, which increases as the thickness decreases. A comparison between the Si3N4 and SiO2 passivation layers shows that SiO2 passivation does not convert the GFET into n-type graphene, which identifies the significance of ammonia. (NH3) for the formation of the n-type GFETs. This study provides an insight into the mechanism of controlling the conduction behavior of unipolar GFETs.

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