Journal
NANOTECHNOLOGY
Volume 23, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/12/125302
Keywords
-
Funding
- EU
- Deutsche Forschungsgemeinschaft (DFG)
Ask authors/readers for more resources
The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 +/- 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available