Journal
NANOTECHNOLOGY
Volume 22, Issue 26, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/26/265203
Keywords
-
Funding
- CAPES, Brazilian agency
- CNPq, Brazilian agency
Ask authors/readers for more resources
InAs nanowires are potential materials for high speed nanoelectronic devices due to their high electron mobility among the semiconductor nanostructures. One of the main challenges, however, is to obtain a p-type InAs material, since the Fermi level is usually pinned at the conduction band, leading to an intrinsic n-type behaviour. Here we show through first principles calculations that InAs nanowires, doped with Cd or Zn substitutional impurities, can behave as p-type materials. Differently from other III-V nanowires, these impurities introduce shallow acceptor levels. We show that the Zn impurity can be equally distributed along the nanowire radius, naturally compensating the surface levels. On the other hand, the Cd impurity is preferentially found in the core region, requiring a surface treatment to eliminate the surface pinning levels. These results explain the available experiments and show how and why p-type InAs nanowires can be obtained.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available