Journal
NANOTECHNOLOGY
Volume 21, Issue 21, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/21/215705
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Funding
- DFG [SFB.631]
- STW-VICI [6631]
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In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer.
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