Journal
NANOTECHNOLOGY
Volume 21, Issue 20, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/20/205304
Keywords
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Funding
- National 973 Program [2007CB935400]
- China Postdoctoral Scientific Foundation [200801200]
- Science and Technology Committee of Shanghai [0752nm013, 0752nm014]
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This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.
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