Journal
NANOTECHNOLOGY
Volume 20, Issue 31, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/31/315304
Keywords
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Funding
- National Basic Research Program of China [2007CB935400, 2006CB302700]
- National High Technology Development Program of China [2008AA031402, 2006AA03Z360]
- Science and Technology Council of Shanghai [0652nm052, 0752nm013, 0752nm014, 07QA14065, 07SA08]
- Shanghai Postdoctoral Scientific Foundation [07R214204]
- China Postdoctoral Scientific Foundation [20070420105]
- Chinese Academy of Sciences [083YQA1001]
- National Nature Science Foundation of China [60776058, 10805069]
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The Si2Sb2Te5 (SST) storage array with a density of 2.4 Gbit inch(-2) was fabricated by UV nanoimprint lithography (UV-NIL) and filling semiconductor technology. The area of the SST storage cell contacted with electrodes was 0.031 mu m(2). Structural transformation of SST during heating was in situ studied by time-resolved x-ray diffraction (XRD). An electrical probe storage system was constructed by SST combining with a conductive atomic force microscope (C-AFM) with a nanoprobe. Switching of the SST electrical probe storage cell from the high resistance state to the low resistance state had been achieved, and the rate of these two resistance states was 37.71. The current increased apparently when the applied voltage exceeded 1.79 V.
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