The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination

Published 2009 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 20, Issue 22, Pages 225201
Publisher
IOP Publishing
Online
2009-05-13
DOI
10.1088/0957-4484/20/22/225201

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.