Journal
NANOTECHNOLOGY
Volume 20, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/12/125606
Keywords
-
Funding
- Society for Microelectronics (GME, Austria)
- Austrian Science Foundation [P18080-N07]
- USTEM TU-Wien
- Austrian Science Fund (FWF) [P18080] Funding Source: Austrian Science Fund (FWF)
Ask authors/readers for more resources
Kinked silicon nanowires (Si-NWs) were synthesized in a well reproducible manner using gold nanocluster-catalyzed quasi-one-dimensional growth on Si(111) substrates with silane (SiH4) as the precursor gas. The kinking is considered to be due to the change in the growth direction induced by the sudden change of the pressure during Si-NW synthesis. Structural high resolution transmission electron microscopy (HRTEM) characterization of the sample shows that epitaxial Si-NWs synthesized on Si(111) substrates at a total pressure of 3 mbar grow along the < 111 > direction, while the ones at 15 mbar favour the < 112 > direction. By dynamically changing the system pressure during the growth process morphological changes of the NW growth directions along their length have been shown, resulting in kinked nanowires. The crystallographic orientation relation of the kinking between the 3 and 15 mbar ranges has been analysed by TEM. It is shown that no defects or grain boundaries in the intersection between the two sections of the Si-NWs are necessary to form such kinks between different wire directions.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available