Journal
NANOSCALE RESEARCH LETTERS
Volume 13, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-018-2721-0
Keywords
MoTe2; P-type; N-type; Absorbates; Vacancies
Funding
- National Natural Science Foundation of China [51502337, 11574171, 51472019]
- Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics
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Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it in vacuum. Temperature-dependent in situ measurements assisted by the results given by first-principle simulations indicate that n-type conductance is an intrinsic property, which is attributed to tellurium vacancies in MoTe2, while the device in air experiences a charge transfer which is caused by oxygen/water redox couple and is converted to air-stable p-type transistor. Based on p-type and n-type multi-layered MoTe2 transistors, we demonstrate a complementary inverter with gain values as high as 9 at V-DD = 5 V.
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