Tensile strain induced switching of magnetic states in NbSe2and NbS2single layers
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Tensile strain induced switching of magnetic states in NbSe2and NbS2single layers
Authors
Keywords
-
Journal
Nanoscale
Volume 6, Issue 21, Pages 12929-12933
Publisher
Royal Society of Chemistry (RSC)
Online
2014-08-22
DOI
10.1039/c4nr01486c
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Intrinsic Magnetism of Grain Boundaries in Two-Dimensional Metal Dichalcogenides
- (2013) Zhuhua Zhang et al. ACS Nano
- Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet
- (2013) Yeung Yu Hui et al. ACS Nano
- Strong ferromagnetism in hydrogenated monolayer MoS2tuned by strain
- (2013) Hongliang Shi et al. PHYSICAL REVIEW B
- Ferromagnetism in ultrathin VS2 nanosheets
- (2013) Daqiang Gao et al. Journal of Materials Chemistry C
- Tensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2
- (2012) Yungang Zhou et al. ACS Nano
- Evidence of the Existence of Magnetism in Pristine VX2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties
- (2012) Yandong Ma et al. ACS Nano
- Intrinsic Piezoelectricity in Two-Dimensional Materials
- (2012) Karel-Alexander N. Duerloo et al. Journal of Physical Chemistry Letters
- Thick lead-free ferroelectric films with high Curie temperatures through nanocomposite-induced strain
- (2011) Sophie A. Harrington et al. Nature Nanotechnology
- Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers
- (2011) Yandong Ma et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Electric Field as a Switching Tool for Magnetic States in Atomic-Scale Nanostructures
- (2011) N. N. Negulyaev et al. PHYSICAL REVIEW LETTERS
- Control of direct band gap emission of bulk germanium by mechanical tensile strain
- (2010) M. El Kurdi et al. APPLIED PHYSICS LETTERS
- First-principles theory of dilute magnetic semiconductors
- (2010) K. Sato et al. REVIEWS OF MODERN PHYSICS
- Strain-Induced Pseudo-Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles
- (2010) N. Levy et al. SCIENCE
- Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
- (2009) Min Chu et al. Annual Review of Materials Research
- Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering
- (2009) F. Guinea et al. Nature Physics
- Strain Engineering of Graphene’s Electronic Structure
- (2009) Vitor M. Pereira et al. PHYSICAL REVIEW LETTERS
- Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening
- (2008) Zhen Hua Ni et al. ACS Nano
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search