Journal
NANOSCALE
Volume 6, Issue 19, Pages 11316-11321Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr03475a
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Funding
- Ministry of Science and Technology of China [2011CB933001, 2011CB933002]
- National Science Foundation of China [61322105, 61271051, 61376126, 61321001, 61390504]
- Beijing Municipal Science and Technology Commission [Z131100003213021, 20121000102]
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Thin yttria films were investigated for use as gate dielectrics in carbon nanotube field-effect transistors (CNTFETs) with the gate length scaled down to sub-50 nm size. The yttria film provided an omega-shaped gate dielectric with a low interface trap density, a low average sub-threshold swing of 74 mV per decade for both long and short CNTFETs, and a small drain-induced barrier lowering. It was also shown that the performance of CNTFETs increases with decreasing temperature, with an excellent sub-threshold swing of 22 mV per decade at liquid nitrogen temperatures. A method was developed to retrieve the interface trap density in CNTFETs and a low interface trap density of 5.2 x 10(6) cm(-1) was achieved, indicating the high electric quality of the yttria films.
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