Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon
Published 2012 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon
Authors
Keywords
-
Journal
Nanoscale
Volume 4, Issue 5, Pages 1486
Publisher
Royal Society of Chemistry (RSC)
Online
2012-01-19
DOI
10.1039/c2nr11799a
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates
- (2011) Emanuele Uccelli et al. NANO LETTERS
- Nanolasers grown on silicon
- (2011) Roger Chen et al. Nature Photonics
- Si–InAs heterojunction Esaki tunnel diodes with high current densities
- (2010) M. T. Björk et al. APPLIED PHYSICS LETTERS
- GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si
- (2010) Katsuhiro Tomioka et al. NANO LETTERS
- Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)
- (2010) Peter Krogstrup et al. NANO LETTERS
- Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes
- (2010) S. W. Boettcher et al. SCIENCE
- Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires
- (2009) Matthias Heigoldt et al. JOURNAL OF MATERIALS CHEMISTRY
- Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection
- (2009) Wei Wei et al. NANO LETTERS
- GaAs Core−Shell Nanowires for Photovoltaic Applications
- (2009) Josef A. Czaban et al. NANO LETTERS
- Growth of Stacking-Faults-Free Zinc Blende GaAs Nanowires on Si Substrate by Using AlGaAs/GaAs Buffer Layers
- (2009) Hui Huang et al. NANO LETTERS
- Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates
- (2009) G. E. Cirlin et al. Physica Status Solidi-Rapid Research Letters
- Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
- (2008) A. Fontcuberta i Morral et al. APPLIED PHYSICS LETTERS
- General theoretical considerations on nanowire solar cell designs
- (2008) A. Kandala et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
- (2008) C. Colombo et al. PHYSICAL REVIEW B
- Prismatic Quantum Heterostructures Synthesized on Molecular‐Beam Epitaxy GaAs Nanowires
- (2008) Anna Fontcuberta i Morral et al. Small
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started