Journal
NANOSCALE
Volume 3, Issue 2, Pages 654-660Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c0nr00644k
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Funding
- National Basic Research Program of China [2007CB936201]
- Funds for International Cooperation and Exchange [50620120439, 2006DFB51000]
- Science Foundation [50772011, NCET-07-0066]
- Fundamental Research Funds for the Central Universities
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In this article, Co/Mn-codoped ZnO nanowires (NWs) were successfully synthesized on a silicon substrate by the thermal evaporation method with Au catalyst. The X-ray diffraction pattern indicated that the Co/Mn-codoped ZnO NWs are a hexagonal wurtzite structure without a second phase, and energy dispersive X-ray spectroscopy revealed that the Co and Mn ions were introduced into the ZnO NWs with the content of similar to 0.8 at% and similar to 1.2 at%, respectively. Photoluminescence spectra and Raman spectra showed that the Co/Mn were doped into the NWs and resulted in the shift of the near-band-edge emission. Moreover, the novel Raman peak at 519.3 cm(-1) has suggested that the two kinds of cations via doping could affect the local polarizability. Compared with the undoped ZnO NW, the electrical measurement showed that the Co/Mn-codoping enhanced the conductivity by an order of magnitude due to the presence of Co, Mn cations. The electron mobility and carrier concentration of a fabricated field effect transistor (FET) device is 679 cm(2) V (1) s (1) and 2 x 10(18) cm (3), respectively. Furthermore, the M-H curve demonstrated that the Co/Mn-codoped ZnO NWs have obvious ferromagnetic characteristics at room temperature. Our study enhances the understanding of the novel performances of transition-metal codoped ZnO NWs and also provides a potential way to fabricate optoelectronic devices.
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